? by semikron 0698 b 16 C 39 absolute maximum ratings symbol conditions 1) values units inverter v ces v ges i c i cm i f = Ci c i fm = Ci cm t j t stg v isol t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c ac, 1 min. 600 20 100 / 70 200 / 140 130 / 88 260 / 186 C 40 . . . + 150 C 40 . . . + 125 2500 v v a a a a c c v characteristics symbol conditions 1) min. typ. max. units igbt - inverter v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 100 a t j = 25 (125) c v cc = 300 v; v ge = 15 v i c = 100 a; t j = 125 c r gon = r goff = 11 w inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt C C C C C C C C 2,1(2,2) 60 80 330 550 15 5,6 C 2,7(2,8) 120 160 500 830 C C 0,5 v ns ns ns ns mj nf k/w diode 2) - inverter v f = v ec v to r t i rrm q rr e off r thjh i f = 100 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 100 a, v r = C 300 v di f /dt = C 800 a/ m s v ge = 0 v, t j = 125 c per diode C C C C C C C 1,5(1,45) 0,85 6 60 7,0 3,0 C 1,7(1,7) 0,9 8 C C C 0,75 v v m w a m c mj k/w current sensor for three phase output ac current (skiip 83 ac 06 i) i p rms i pmax rms i p peak r out i s rms i p : i s offset error linearity delay time bandwidth continuous current, t = 100 c, v suppl = 15 v t 2 s t 10 m s terminating resistance rated sensor current at i p = 50 a rms transfer ratio i p = 0 a, t = C 40 ... 100 c i p = 10 % C 80 % 90 % C 20 % C C C C C C C C 50 C 1000 50 25 1 : 2000 0,2 0,1 < 1 < 1 0 C 100 C 80 C C C C C C (C 3db) a a a w ma ma % m s m s khz temperature sensor r ts t = 25 / 100 c 1000 / 1670 w mechanical data m 1 case case to heatsink, si units mechanical outline see pages b 16 C 11 and b 16 C 12 2,5 C m8 3,5 nm skiip 83 ac 06 - skiip 83 ac 06 i miniskiip 8 semikron integrated intelligent power skiip 83 ac 06 skiip 83 ac 06 i 3) igbt 3-phase bridge inverter case m8 ul recognized file no. e63532 ? more detailed characteristics of current sensors and temperature sensor please refer to part a ? common characteristics see page b 16 C 3 options ? also available with faster igbts (type ... 063), data sheet on request 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery) 3) with integrated closed loop current sensors ~ ~ ~
b 16 C 40 0698 ? by semikron fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) t j = 125 c v ce = 300 v v ge = 15 v i c = 100 a t j = 125 c v ce = 300 v v ge = 15 v r g = 11 w i cpuls = 100 a v ge = 0 v f = 1 mhz fig. 1 typ. output characteristic, t p = 80 m s; 25 c fig. 2 typ. output characteristic, t p = 80 m s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce
? by semikron 0698 b 16 C 3 fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v fig. 7 rated current of the igbt i cop / i c = f (t h ) t j = 150 c v ge = 3 15 v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini0607 t h [c] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode 2. common characteristics of miniskiip miniskiip 600 v
miniskiip 8 inverter part skiip 82 ac 06 ... skiip 83 ac 06 ... skiip 81 ac 12 ... skiip 82 ac 12 ... skiip 83 ac 12 ... circuit case m8 note: the current sensors are available only by option i
miniskiip 8 inverter part skiip 82 ac 06 ... skiip 83 ac 06 ... skiip 81 ac 12 ... skiip 82 ac 12 ... skiip 83 ac 12 ... case m8 layout and connections for the customers printed circuit board pin connection optional 1t + 2t - 3~1et1 cb1 4gb1 5gt1 6 C eb1 eb2 eb3 7 + ct1 ct2 ct3 8gb2 9gt2 10 ~2 et2 cb2 11 + ct1 ct2 ct3 12 C eb1 eb2 eb3 13 gt3 14 ~3 et3 cb3 15 gb3 16 k1 for ~1 x 17 k2 for ~1 x 18 s1 for ~1 x 19 s2 for ~1 x 20 k1 for ~2 x 21 k2 for ~2 x 22 s1 for ~2 x 23 s2 for ~2 x 24 k1 for ~3 x 25 k2 for ~3 x 26 s1 for ~3 x 27 s2 for ~3 x
|
